s m d ty p e w w w . k e x i n . c o m . c n 1 m osf e t n-cha nne l enha nc e m e nt mo s f e t ndt3 5 n0 6 feat ur es v d s ( v ) = 60v i d = 35 a r d s ( o n ) 23m ( v g s = 10v ) r d s ( o n ) 33m ( v g s = 4.5v ) r d s ( o n ) 37m ( v g s = 4v ) 2 . 3 0 . 6 0 + 0 . 1 - 0 . 1 6 . 5 0 + 0 . 1 5 - 0 . 1 5 1 . 5 0 + 0 . 1 5 - 0 . 1 5 0 . 8 0 + 0 . 1 - 0 . 1 4 . 6 0 + 0 . 1 5 - 0 . 1 5 0 . 5 0 + 0 . 1 5 - 0 . 1 5 9 . 7 0 + 0 . 2 - 0 . 2 5 . 3 0 + 0 . 2 - 0 . 2 2 . 3 0 + 0 . 1 - 0 . 1 0 . 5 0 + 0 . 8 - 0 . 7 5 . 5 5 + 0 . 1 5 - 0 . 1 5 2 . 6 5 + 0 . 2 5 - 0 . 1 1 . 5 0 + 0 . 2 8 - 0 . 1 0 . 1 2 7 m a x 3 . 8 0 t o - 2 5 2 u n i t : m m 4 1 : g a t e 2 : d ra in 3 : s o urc e 4 : d ra in 1 3 2,4 a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol tage v d s 60 g ate- s our c e v ol tage v g s 20 conti nuous dr ai n cur r ent i d 35 p ul s ed dr ai n cur r ent ( note.1) i d p 105 a v al anc he cur r ent ( note.2) i a v 18 a v al anc he e ner gy ( s i ngl e p ul s e) ( note.3) e a s 19 m j p ow er di s s i pati on t c = 25 c p d 40 w j unc ti on t em per atur e t j 150 s tor age t em per atur e range t s tg - 55 to 15 0 v a note.1 :p w 10 us , duty c y c l e 1% note.2 :l 100 h, s i ngl e pul s e note.3 :v d d = 10v , l= 100 h, i a v = 18a
s m d ty p e w w w . k exi n . co m . c n 2 m osf e t n-cha nne l enha nc e m e nt mo s f e t ndt3 5 n0 6 e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = 1m a , v g s = 0v 60 v z er o g ate v ol tage dr ai n cur r ent i d s s v d s = 60v , v g s = 0v 1 g ate- b ody leak age cur r ent i g s s v d s = 0v , v g s = 16v 10 cutoff v ol tage v g s ( o f f ) v d s = 10v , i d = 1m a 1.2 2.6 v f or w ar d t r ans fer a dm i ttanc e | y f s | v d s = 10v , i d = 18a 35 s r d s ( o n ) 1 v g s = 10v , i d = 18a 17 23 r d s ( o n ) 2 v g s = 4.5v , i d = 9a 23 33 r d s ( o n ) 3 v g s = 4.0v , i d = 5a 25 37 in put capac i tanc e c i ss 1820 o utput capac i tanc e c o ss 150 rev er s e t r ans fer capac i tanc e c r ss 100 t otal g ate char ge q g 34.5 g ate s our c e char ge q g s 6.5 g ate dr ai n char ge q g d 6.8 t ur n- o n del ay t i m e t d ( o n ) 16 t ur n- o n ri s e t i m e t r 110 t ur n- o ff del ay t i m e t d ( o f f ) 125 t ur n- o ff f al l t i m e t f 87 m ax i m um b ody - di ode conti nuous cur r ent i s 35 a di ode f or w ar d v ol tage v s d i s = 35a ,v g s = 0v 0.96 1.2 v pf nc ns s ee s pec i fi ed t es t ci r c ui t v g s = 0v , v d s = 20 v , f= 1m hz v g s = 10v , v d s = 30v , i d = 35a a s tati c dr ai n- s our c e o n- res i s tanc e m s w i t c h i n g ti m e t e s t c i r c u i t: p w = 10 s d .c. 1% p .g 50 g s d i d = 18a r l = 1.67 v d d = 30v v o ut v i n 10v 0v v i n
s m d ty p e w w w . ke x in . com . c n 3 m osfe t n-cha nne l enha nc e m e nt mo s f e t ndt3 5 n0 6 ty pic al c har ac t er is it ic s r d s ( o n) - - v g s r d s ( o n) - - t c i d - - v d s i d - - v g s i s - - v s d drain-to-source v oltage, v ds - - v drain current, i d - - a gate-to-source v oltage, v gs - - v drain current, i d - - a gate-to-source v oltage, v gs - - v case t emperature, t c - - c static drain-to-source on-state resistance, r ds (on) - - m static drain-to-source on-state resistance, r ds (on) - - m drain current, i d - - a diode forward v oltage, v sd - - v source current, i s - - a | y f s | - - i d forward t ransfer admittance, | y fs | - - s 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.01 7 5 3 2 25 c - -25 c t c=75 c 0.1 1.0 2 5 3 2 2 3 5 7 10 3 5 7 5 0 0 55 16 2 1 4 3 6 5 8 9 7 10 12 11 - - 50 - - 25 0 25 50 75 100 125 150 14 15 13 45 50 35 25 40 30 5 10 20 15 0 55 50 45 40 35 30 25 20 15 10 5 v ds =10v single pulse i d =5a 18a 5 . 5 0 1.5 0 0 35 25 5 15 20 30 10 2.0 0.2 0.6 1.2 6 . 1 8 . 0 4 . 0 1.4 8 . 1 0 . 1 0 60 50 40 3.0 4.5 1.0 2.5 4.0 0.5 2.0 3.5 5.0 30 20 10 3.5v 4.5v v gs =2.5v - -25 c 25 c t c=75 c 2 0.1 7 5 3 2 16.0v 8.0v 10.0v v gs =4.0v , i d =5a v gs =10.0v , i d =18a t c= - -25 c 75 c 25 c 1.0 7 5 7 3 2 10 7 5 3 2 1.0 7 5 3 2 10 7 5 3 2 100 7 5 3 75 c 25 c t c= - -25 c 3.0v 4.0v 6.0v 9a v gs =4.5v , i d =9a t c=25 c single pulse single pulse v gs =0v single pulse v ds =10v single pulse t c=25 c single pulse
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . n-cha nne l enha nc e m e nt mo s f e t ndt3 5 n0 6 ty pic al c har ac t er is it ic s s w t im e - - i d drain current, i d - - a switching t ime, sw t ime - - ns drain-to-source v oltage, v ds - - v ciss, coss, crss - - pf ciss, co ss, crss - - v d s 0 6 0 20 30 40 50 10 f=1mhz coss crss 100 10 3 2 5 7 3 2 5 7 7 0.1 1.0 2 3 5 7 7 2 3 5 100 v dd =30v v gs =10v t d (of f) t f t d (on) t r 10 2 3 5 7 ciss 100 1000 7 5 7 5 5 3 2 3 2 v g s - - q g t otal gate cha r ge, qg - - nc gate-to-source v oltage, v gs - - v e a s - - t a a valanche ene r gy derating factor - - % ambient t emperature, t a - - c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 0 0 1 2 3 4 5 6 7 8 40 10 15 20 25 30 35 10 9 5 v ds =30v i d =35a a s o p d - - t c drain-to-source v oltage, v ds - - v drain current, i d - - a case t emperature, t c - - c allowable power dissipation, p d - - w 2 3 2 5 3 7 2 0.1 1.0 3 5 7 2 10 2 7 5 3 2 7 5 3 2 0.1 1.0 3 5 7 10 100 operation in this area is limited by r ds (on). 10 s 100 s i d =35a i dp =105a dc operation 1ms 10ms 100ms 3 5 7 100 0 0 0 20 40 60 10 5 15 30 35 40 20 25 80 100 120 45 140 160 pw 10 s t c=25 c single pulse
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